Tower Semiconductor Expands Industry-Leading Power Management Platforms Supporting Higher Power and Voltage ICs

Released its second-generation 65nm BCD scalable power LDMOS boosting voltages to 24V operation and 20% lower Rdson; and the addition of deep trench isolation (DTI) to its 180nm BCD platform allowing up to 40% reduction in die size for operation down to 125V

MIGDAL HAEMEK, Israel, May 9, 2022 – Tower Semiconductor (NASDAQ/TASE: TSEM), the leading foundry of high-value analog semiconductor solutions, today announced the expansion of its power management platforms with the release of the second generation of its state-of-the-art 65nm BCD extending operation to 24V and reducing Rdson by 20%. The company is also adding deep trench isolations to its 180nm BCD platform, enabling up to 40% reduction in die size for voltages up to 125V. The new versions meet the growing demand for higher power ICs at higher voltages and power efficiency, further strengthening Tower’s market leadership position in support of the power IC market which Yole Development (Yole) predicts will reach more than 25.5 billion by 2026.

Tower’s 65nm BCD platform is known as the best sub-90nm BCD technology with its main figure of merit in power performance, cost and integration competitiveness. The second generation 65nm BCD benefits from power performance and/or chip size reduction of up to 20% due to lower LDMOS Rdson for devices down to 16V as well as the voltage extension to 24V operation. These advancements firmly meet the needs of the IT and consumer markets for monolithic high-power converters, including a high-power voltage regulator for CPU and GPU in addition to applications such as high power motor drivers of chargers and power converters.

The company’s 180nm BCD is the largest and best-in-class platform in voltage coverage, isolation patterns, power performance, die size and mask count. The 180 nm BCD Deep Trench Isolation (DTI) scheme provides improved noise immunity in a single IC, flexibility at high voltages to choose between multiple isolation schemes, and reduced die size down to 40%. All of these strategic features support the growing market deployment of 48V systems that require integrated circuits to maintain voltages up to 120V and above; and specifically meet the increasing demands of industrial and automotive applications including gate drivers, power converters, motor drivers and 48V automotive systems with their demand for advanced isolations in integrated circuits with multiple voltage ranges to a smaller chip size.

The company will attend the upcoming PCIM 2022 in Nürnberg, Germany, May 10-12, 2022, Booth: #6-431.

For more details on the company’s power management technology offerings, please visit here.

About Tower Semiconductor

Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growing markets such as consumer markets , industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor is focused on creating a positive and lasting impact on the world through long-term partnerships and its advanced and innovative analog technology offering, comprised of a wide range of customizable process platforms such as SiGe, BiCMOS, mixed signal/CMOS, RF CMOS, image sensor CMOS, non-imaging sensors, integrated power management (BCD and 700V) and MEMS. Tower Semiconductor also provides world-class design enablement for fast and accurate design cycle and process handoff services, including development, handoff and optimization, to IDMs and fabless companies. To provide multi-fab sourcing and expanded capacity to its customers, Tower Semiconductor has two manufacturing plants in Israel (150mm and 200mm), two in the United States (200mm), three facilities in Japan (two 200mm and a 300mm) which it owns through its 51% stake in TPSCo and shares a 300mm manufacturing facility being established in Italy with ST. For more information, please visit:

Alan A. Seibert